journal article·2026-07-03

High‐Performance KV 3 Sb 5 /WSe 2 Van Der Waals Photodetectors

Yang Yang, Shaofeng Rao, Yuxuan Hou, Jiabo Liu, Deng Hu, Yufei Guo, Jianzhou Zhao, Hechen Ren, Zhiwei Wang, Fan Yang

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Abstract

ABSTRACT Kagome metals AV 3 Sb 5 (A = K, Rb, Cs) have recently emerged as a promising platform for exploring correlated and topological quantum states, yet their potential for optoelectronic applications remains largely unexplored. Here, we report high‐performance photodetectors based on van der Waals KV 3 Sb 5 /WSe 2 heterojunctions. A high‐quality Schottky interface readily forms between KV 3 Sb 5 and WSe 2 , enabling efficient separation and transport of photoinduced carriers. Under 520 nm illumination, the device achieves an open‐circuit voltage up to 0.6 V, a responsivity of 809 mA W −1 , and a fast response time of 18.3 µs. This work demonstrates the promising optoelectronic applications of Kagome metals and highlights the potential of KV 3 Sb 5 ‐based van der Waals heterostructures for high‐performance photodetection.
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Research context

OpenAlex topics: Topological Materials and Phenomena · 2D Materials and Applications · Advanced Thermoelectric Materials and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Joint Quantum Studies and Department of Physics School of Science Tianjin University Tianjin China

Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology Department of Physics Tianjin University Tianjin China

Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement Ministry of Education School of Physics Beijing Institute of Technology Beijing China

Micronano Center Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems Beijing Institute of Technology Beijing China

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