journal article·2026-07Open access

Grain‐Size‐Controlled Resistive Switching Memories Enabling Domain‐Specific Functionality for Real‐Time Video Signal Processing

Dohyung Kim, Hansol Park, Phuoc Loc Truong, Daeho Lee, Hui Joon Park

Small· Volume 22· Issue 40

Abstract

ABSTRACT Conventional neuromorphic platforms often rely on heterogeneous device integration to deliver multiple functionalities, a strategy that increases system complexity and hinders scalability. Here, we present a platform based on a grain‐size‐controlled resistive switching memory (RSM) array incorporating a Sn‐halide perovskite thin film. A photo‐thermochemical process produces laterally varying grain sizes and therefore spatially graded grain‐boundary densities across the array. This intentionally introduced structural heterogeneity produces domain‐dependent volatile threshold‐switching behavior and short‐term neural dynamics, since local grain‐boundary density controls conductive‐filament formation and ionic transport. As a result, time‐dependent processing primitives—nonlinear conductance modulation, relaxation dynamics, integrate‐and‐fire responses, and signal separability—arise intrinsically and differentially across spatial domains, with their characteristics finely tunable via grain‐boundary density. We validate the approach in a real‐time spatiotemporal signal‐processing system for autonomous‐driving tasks, illustrating that grain‐boundary engineering provides a scalable, fabrication‐friendly route to embed diverse temporal functions within a single RSM array.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Organic and Nano Engineering Hanyang University Seoul South Korea

Human‐Tech Convergence Program Hanyang University Seoul South Korea

Department of Mechanical Engineering Gachon University Gyeonggi South Korea

Department of Semiconductor Engineering Hanyang University Seoul South Korea

Funding

National Research Foundation of Korea

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