2D Semiconductor Hexagonal Boron Nitride Towards Broad Optoelectronic Applications

ABSTRACT Hexagonal boron nitride (h‐BN) is one of the most important two‐dimensional semiconductor materials due to its outstanding photoelectric properties, high mechanical strength and physicochemical stability. In this review, we contribute a critical summary of recent advances in h‐BN research and outline remarkable challenges toward broad optoelectronic applications. Progresses on the fundamental properties of h‐BN, including the structural, mechanical, bandgap, optoelectronic and thermodynamic properties, are included. The development of advanced synthesis methods and techniques for h‐BN is systematically highlighted. Important functional components of h‐BN have been studied for the future construction of multifunctional device structures, which will also lead to the design of novel optoelectronic devices conjugated with other advanced low‐dimensional materials. Finally, we give a brief outlook pointing out critical challenges, important issues and directions aiming at further fundamental understanding and wider functionalization of h‐BN.