Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices

ABSTRACT Integrating two‐dimensional (2D) materials into functional electronic devices remains a major challenge, requiring precise, defect‐free deposition and patterning techniques. In this work, we present experimental results on the fabrication of heterostructures composed of graphene, PdSe ₂ , and MoSe ₂ using the Laser‐Induced Forward Transfer (LIFT) technique. This digital, maskless method enables accurate positioning and shape definition of 2D material pixels with micrometer‐scale resolution. We demonstrate the assembly of vertically stacked heterostructures and the fabrication of 2D material‐based pn‐junctions on Si/SiO ₂ substrates, with monolayer graphene serving as the transparent top electrode. The pn‐junctions, comprising p‐type PdSe ₂ and n‐type MoSe ₂ , exhibit consistent and stable electrical performance across multiple devices, with operational voltages ranging from −2 to 2 V. Importantly, the integration of graphene preserves device integrity and functionality. Structural and electrical characterization was performed using Raman spectroscopy, atomic force microscopy (AFM), Scanning electron microscopy (SEM) and field‐effect transistor (FET) measurements. High‐quality material transfer was confirmed, with mobilities values reaching up to 1200 ± 50 cm ² V ^{− 1} s ^{− 1} . These results highlight the effectiveness of LIFT for constructing complex 2D heterostructures and emphasize its potential for the scalable fabrication of high‐performance electronic and optoelectronic devices.