Ga‐Assisted Free‐Standing Growth of CsPbBr ₃ Nanowires for High‐Performance Optoelectronic Applications

ABSTRACT 1D CsPbBr ₃ nanowires have attracted considerable interest in optoelectronics due to their high carrier mobility, high absorption efficiency, and intrinsic anisotropy. However, conventional synthesis methods typically grow in‐plane along the substrate, which makes it challenging to physically transfer them to functional substrates for optoelectronic device applications. Here, we successfully achieve direct growth free‐standing CsPbBr ₃ nanowires using Ga metal as a growth assistant, which can be readily transferred to arbitrary substrates. Benefiting from the natural cavity, the transferred CsPbBr ₃ nanowire exhibited a single‐mode laser with a remarkable polarization ratio of 0.908. Furthermore, we constructed a nanowire‐based photodetector, which demonstrated a low dark current (0.1 pA at 1 V), a fast response time (451 and 676 µs for rise/fall time), and excellent environmental stability. These results reveal the promise of free‐standing nanowires for polarized optoelectronics and provide a versatile platform for developing high‐performance photodetectors and other nanoscale optoelectronic devices.