Large‐Area Polymorphic In ₂ Se ₃ Ferroelectric Transistor Array for Stable Nonvolatile Storage and High‐Precision Neuromorphic Computing

ABSTRACT 2D ferroelectric field‐effect transistors (FeFETs) are expected to be a practical solution for next‐generation in‐memory computing, seamlessly integrating with computer hardware architectures to overcome the von Neumann bottleneck. At present, emerging 2D materials are driving chip miniaturization. Among them, In ₂ Se ₃ stands out, as both theoretical and experimental studies have confirmed its novel physical properties with practical applications. Notably, monolayer In ₂ Se ₃ retains ferroelectricity at room temperature and exhibits high carrier field‐effect mobility (µ _FE ). Furthermore, it can be synthesized via chemical vapor deposition (CVD) as thin films, demonstrating strong potential for large‐area 2D FeFET array. Here, we investigate the In ₂ Se ₃ thin film FeFET array prepared by CVD, which has a µ _FE of 151.7 cm ² V ⁻¹ s ⁻¹ and an on‐off ratio of up to 10 ⁶ . Inspiringly, the array exhibits stable, non‐volatile characteristics, maintaining a high‐to‐low resistance state window of larger than 10 ² even after 1800 s. Furthermore, we explore its potential for neuromorphic computing by applying the array to machine learning tasks across various datasets and neural network architectures, consistently achieving a high 2D materials, ferroelectric, neuromorphic, polymorphic, transistor recognition accuracy greater than 90%.