Optimized Rear‐Interface Passivation of SnS Thin‐Film Solar Cells Using a Controlled Germanium Oxide Interlayer for Enhanced Photovoltaic Performance (Small 51/2025)
Source abstract
Abstract
Thin-Film Solar Cells In article number 2507626, Jaeyeong Heo and co-workers highlight efficiency enhancement in thin-film solar cells utilizing SnS absorber layers. In contrast to directly depositing SnS on conventional SLG/Mo substrates, the insertion of a GeOx rear passivation layer enables effective interface defect passivation and improves the characteristics of the overlying SnS absorber layer. Consequently, this approach facilitates the realization of higher-efficiency thin-film solar cells.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Chemical and Physical Properties of Materials · TiO2 Photocatalysis and Solar Cells
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Affiliations
Department of Materials Science and Engineering and Optoelectronics Convergence Research Center Chonnam National University Gwangju 61186 Republic of Korea
Department of Materials Engineering Korea Aerospace University Goyang 10540 Republic of Korea
References
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