Restorative Effects of Low‐Temperature Post‐Sulfur Annealing on Device Performance of Monolayer MoS 2 Transistors for NMOS Inverters (Small 49/2025)
Source abstract
Abstract
Metal-Oxide Semiconductor Inverter In article number 2506345, Jiwon Chang, Tae-Jun Ha, and co-workers investigated restorative effects of low-temperature post-sulfur annealing on the electrical properties of monolayer MoS2 films, which resulted in significant improvements in the device performance of the resulting MoS2 transistors. This study is the first to develop an enhanced NMOS inverter based on S-passivated monolayer MoS2 prepared by post-sulfur annealing at 160 °C.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Advanced Materials and Semiconductor Technologies · Chalcogenide Semiconductor Thin Films
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Affiliations
Department of Electronic Materials Engineering Kwangwoon University Seoul 01897 Republic of Korea
Department of Materials Science and Engineering Yonsei University Seoul 03722 Republic of Korea
Department of System Semiconductor Engineering Yonsei University Seoul 03722 Republic of Korea
References
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