SnSe _1‐x S _x Alloys: Anisotropic Van der Waals Semiconductors with Tunable Bandgaps

Abstract Alloying is one of the main tools of bandgap engineering, allowing the tuning of crystal structure, lattice parameters, and electronic structure of 3D and 2D/layered semiconductors. Among the latter, it can play a key role in tailoring the properties of tin monochalcogenides, a class of van der Waals semiconductors of interest for optoelectronics, thermoelectrics, ferroelectrics, and valleytronics. Here, the study investigates the synthesis and properties of large flakes of the anion substitution alloys SnSe _1‐x S _x . Alloy flakes across a wide range of compositions are obtained systematically by repeated growth from the same mixed (SnS, SnSe) powder precursor. Combined experiment and theory show full miscibility for all compositions, along with tunable lattice constants, bandgaps, and vibrational modes. Atomic resolution imaging demonstrates the accumulation of S and Se in alternating layers in the SnSe _1‐x S _x unit cell, attributed to growth kinetics. Polarized Raman spectroscopy confirms anisotropic vibrational modes; the calculated and measured band structure shows systematic changes in the band edge energies and anisotropic electronic structure due to the anisotropic in‐plane lattice of the monochalcogenides. Cathodoluminescence, finally, indicates that a unique configuration of two non‐degenerate, direct valleys along orthogonal k ‐space directions persists all the way from SnS to SnSe, making SnSe _1‐x S _x alloys interesting for valleytronics.