journal article·2026-06Open access

Confinement at Defect Sites Dissociates Ionic‐Liquid Pairs for Brain‐Like Organic Computing

Chang Min Lee, Hye Jeong Son, Yongsang An, Jin Uk Kim, Hocheon Yoo, Seongbin Ga, Chang Soo Lee, Eun Kwang Lee

Small· Volume 22· Issue 34

Abstract

ABSTRACT Organic electrochemical transistors (OECTs) have attracted significant attention as devices for emulating brain‐like information processing. However, their practical implementation is hindered by the limited ion modulation diversity at the active layer–electrolyte interface. To overcome this limitation, we introduce a metal–organic framework (MOF) as a selective ion‐conducting layer to modulate ion‐pair dissociation. The MOF layer is based on benzoic acid‐modified MIL‐125‐NH 2 (BA‐MOF), which provides active sites that promote the efficient incorporation of ionic liquid ([EMIM][TFSI]) through intentional defect sites. The defective, highly porous architecture of BA‐MOF possesses open‐metal sites to tightly bound the ionic liquid. This integration suppresses ion diffusion through BA‐MOF, enhancing mobility and overall OECT performance. The effectiveness of this strategy is further demonstrated by MNIST pattern recognition simulations, achieving a maximum accuracy of 94.72%, which is close to the ideal benchmark of 95.22%. This observation is supported by density functional theory (DFT) calculations, which revealed that the confinement of [EMIM][TFSI] ion pairs within BA‐MOF reduces the ion‐pair dissociation energy, thereby leading to an increased concentration of free anions. These findings highlight that defect‐sites of MOF not only facilitate ionic‐liquid dissociation but also enable and stable synaptic responses, providing a promising strategy for high‐performance brain‐inspired organic computing.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Covalent Organic Framework Applications · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemical Engineering Pukyong National University Busan Republic of Korea

Department of Chemical Engineering College of Engineering Kyung Hee University Yongin Republic of Korea

Department of Electronic Engineering Hanyang University Seoul Republic of Korea

School of Chemical Engineering University of Ulsan Ulsan Republic of Korea

Funding

National Research Foundation

References (69)

Show source-provided references
1. 10.1002/adfm.20230772910.1002/adfm.202307729 ↗
2. 10.1021/acs.chemmater.4c0159610.1021/acs.chemmater.4c01596 ↗
3. 10.1038/s41467‐024‐47226‐310.1038/s41467‐024‐47226‐3 ↗
4. 10.1063/5.001259910.1063/5.0012599 ↗
5. 10.1002/adma.20220990610.1002/adma.202209906 ↗
6. 10.1038/s41467‐024‐54528‐z10.1038/s41467‐024‐54528‐z ↗
7. 10.1021/acs.chemmater.5c0073710.1021/acs.chemmater.5c00737 ↗
8. 10.1002/advs.20240418210.1002/advs.202404182 ↗
9. 10.1002/aelm.20210051910.1002/aelm.202100519 ↗
10. 10.1038/ncomms1183010.1038/ncomms11830 ↗
11. 10.1016/j.matt.2023.05.00110.1016/j.matt.2023.05.001 ↗
12. 10.1007/s40820-024-01445-x10.1007/s40820-024-01445-x ↗
13. 10.1038/s41378‐023‐00487‐210.1038/s41378‐023‐00487‐2 ↗
14. 10.1002/adma.20220235910.1002/adma.202202359 ↗
15. 10.1039/D4TC03569K10.1039/D4TC03569K ↗
16. 10.1038/s41467‐023‐36480‐610.1038/s41467‐023‐36480‐6 ↗
17. 10.1021/jacs.4c0883310.1021/jacs.4c08833 ↗
18. 10.1093/nsr/nwaf21310.1093/nsr/nwaf213 ↗
19. 10.1021/jacs.5c2022610.1021/jacs.5c20226 ↗
20. 10.1002/aelm.20230064510.1002/aelm.202300645 ↗
21. 10.1021/acs.chemrev.9b0068510.1021/acs.chemrev.9b00685 ↗
22. 10.1038/s41378‐023‐00566‐410.1038/s41378‐023‐00566‐4 ↗
23. 10.1039/D4CS01007H10.1039/D4CS01007H ↗
24. 10.1002/admt.20240131610.1002/admt.202401316 ↗
25. 10.1021/acsami.4c1634010.1021/acsami.4c16340 ↗
26. 10.1016/j.colsurfa.2024.13473510.1016/j.colsurfa.2024.134735 ↗
27. 10.1016/j.micromeso.2009.06.00810.1016/j.micromeso.2009.06.008 ↗
28. 10.1016/j.jece.2025.12100810.1016/j.jece.2025.121008 ↗
29. 10.1021/acs.cgd.7b0125010.1021/acs.cgd.7b01250 ↗
30. 10.1016/j.cej.2023.14186910.1016/j.cej.2023.141869 ↗
31. 10.1016/j.colsurfa.2021.12754210.1016/j.colsurfa.2021.127542 ↗
32. 10.1039/C8RA00882E10.1039/C8RA00882E ↗
33. 10.1016/j.cattod.2012.08.01410.1016/j.cattod.2012.08.014 ↗
34. 10.1016/j.poly.2018.08.01010.1016/j.poly.2018.08.010 ↗
35. 10.1016/j.cej.2020.12610610.1016/j.cej.2020.126106 ↗
36. 10.1039/C5TC00940E10.1039/C5TC00940E ↗
37. 10.1038/srep2980510.1038/srep29805 ↗
38. 10.1021/ma102438k10.1021/ma102438k ↗
39. 10.1039/c3tc31284d10.1039/c3tc31284d ↗
40. 10.1002/adfm.20241753910.1002/adfm.202417539 ↗
41. 10.1002/admt.20240047810.1002/admt.202400478 ↗
42. 10.1002/pol.2021050210.1002/pol.20210502 ↗
43. 10.1002/adma.20070106910.1002/adma.200701069 ↗
44. 10.1038/s41467‐023‐37402‐210.1038/s41467‐023‐37402‐2 ↗
45. 10.1038/s41563‐024‐01875‐310.1038/s41563‐024‐01875‐3 ↗
46. 10.1002/smsc.20240041510.1002/smsc.202400415 ↗
47. 10.1109/TED.2022.321566710.1109/TED.2022.3215667 ↗
48. 10.1109/TED.2024.341894210.1109/TED.2024.3418942 ↗
49. 10.1038/s41528‐020‐0078‐910.1038/s41528‐020‐0078‐9 ↗
50. 10.1016/j.synthmet.2023.11729510.1016/j.synthmet.2023.117295 ↗
51. 10.1038/s41928‐023‐00950‐y10.1038/s41928‐023‐00950‐y ↗
52. 10.1002/adts.20210056310.1002/adts.202100563 ↗
53. 10.1038/s41467‐021‐22680‐510.1038/s41467‐021‐22680‐5 ↗
54. 10.1002/adma.20240588710.1002/adma.202405887 ↗
55. 10.1002/adma.20250705410.1002/adma.202507054 ↗
56. 10.1080/14686996.2022.215229010.1080/14686996.2022.2152290 ↗
57. 10.1038/s41928‐021‐00649‐y10.1038/s41928‐021‐00649‐y ↗
58. 10.1002/smsc.20210004910.1002/smsc.202100049 ↗
59. 10.1088/1361‐6528/ab348010.1088/1361‐6528/ab3480 ↗
60. P. Y.Chen X.Peng andS.Yu paper presented atTechnical Digest—International Electron Devices Meeting IEDM December 2–6 2017.
61. 10.1002/anie.20141063710.1002/anie.201410637 ↗
62. 10.1002/jcc.2008410.1002/jcc.20084 ↗
63. 10.1002/jcc.2288510.1002/jcc.22885 ↗
64. 10.1088/0953‐8984/21/39/39550210.1088/0953‐8984/21/39/395502 ↗
65. 10.1088/1361‐648X/aa8f7910.1088/1361‐648X/aa8f79 ↗
66. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
67. 10.1063/1.338234410.1063/1.3382344 ↗
68. 10.1039/C6RA04656H10.1039/C6RA04656H ↗
69. 10.1016/j.cpc.2004.12.01410.1016/j.cpc.2004.12.014 ↗