Ultrathin Gallium Oxide as Both Surface Passivation Layer with Conductive Filament Contacts and Alternative Gate Dielectric for 2D MOSFETs (Small 37/2025)

2D Semiconductor Devices Ultrathin gallium oxide, naturally formed on the surface of molten gallium, is integrated as a high-quality dielectric passivation layer for 2D WS2 devices. Immediately applied onto the 2D channel to minimize contamination, it significantly enhances ambient stability and preserves electrical performance, while conductive filaments created through electroforming serve as electrical contacts to the passivated 2D channels. More in article number 2410420, Sanghyun Moon and Jihyun Kim.