DataVXSmallPaper
journal article·2025-08Open access

Unpacking the Interface Dipole Couplings of 0D/2D Carbon‐based Nonvolatile Optoelectronic Memory (Small 33/2025)

Zhe‐Hao Liu, Po‐Hsuan Hsiao, Pin‐Chao Liao, Yen‐Hsun Su, Le Vo Phuong Thuan, Yi‐Ting Li, Chia‐Yun Chen

Small· Volume 21· Issue 33
Publisher pageOpen full text
Source abstract

Abstract

Optoelectronic Memory Breakthrough 0D/2D carbon interfaces enable ultra-low voltage, extraordinary nonvolatile retention characteristics and high-performance optoelectronic memory. On writing state, the evolution of dipolar coupling at CQD/f-Gra interfaces creates the 2D confinement zone that immobilizes the photogenerated electrons, paving the hole current via a CQD channel; on erasing state, the onset electron trapping at CQD/f-Gra interfaces can be readily compensated with the low gate employment of −12 V, where the results pave an important step toward advanced UV optoelectronics. More in article number 2502244, Chia-Yun Chen and co-workers.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Semiconductor Quantum Structures and Devices · Photonic and Optical Devices · Quantum optics and atomic interactions

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering National Cheng Kung University Tainan 70101 Taiwan

Program on Semiconductor Packaging and Testing Academy of Innovative Semiconductor and Sustainable Manufacturing National Cheng Kung University Tainan 70101 Taiwan

Program on Key Materials Academy of Innovative Semiconductor and Sustainable Manufacturing National Cheng Kung University Tainan 70101 Taiwan

Hierarchical Green‐Energy Materials (Hi‐GEM) Research Center National Cheng Kung University Tainan 70101 Taiwan

References

Reference metadata was not supplied for this record.