DataVXSmallPaper
journal article·2025-04Open access

A New Back‐End‐Of‐Line Ferroelectric Field‐Effect Transistor Platform via Laser Processing (Small 15/2025)

Sang Woo Kim, Wonjun Shin, Ryun‐Han Koo, Jangsaeng Kim, Jiseong Im, Dooyong Koh, Jong‐Ho Lee, Suraj S Cheema, Daewoong Kwon

Small· Volume 21· Issue 15
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Source abstract

Abstract

Field-Effect Transistors In article number 2406376, Wonjun Shin, Suraj S. Cheema, Daewoong Kwon, and co-workers demonstrates a breakthrough in ferroelectric field-effect transistor (FeFET) technology by integrating polycrystalline silicon channels via locally-confined laser thermal processing and hafnia-based ferroelectrics using low-temperature atomic layer deposition. The resulting BEOL-compatible FeFET platform achieves wafer-scale uniformity, record-high memory windows, and exceptional energy efficiency, paving the way for neuromorphic computing and monolithic 3D integration.
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Research context

Electronic materialsMaterials processing

OpenAlex topics: Semiconductor materials and devices

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Affiliations

Department of Electrical Engineering Hanyang University Seoul 04763 Republic of Korea

Research Laboratory of Electronics Massachusetts Institute of Technology Cambridge MA 02139 USA

Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon 16419 Republic of Korea

Department of Electrical and Computer Engineering and Inter‐university Semiconductor Research Center Seoul National University Seoul 08826 Republic of Korea

Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USA

Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA

References

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