Origin of Enhanced Photoelectrochemical Activity of the n‐CdS/p‐type Semiconductor Interface: Homojunction or Heterojunction? (Small 1/2025)

Sang Youn Chae; Minki Jun; Noyoung Yoon; Oh Shim Joo; Jin Young Kim; Eun Duck Park

doi:10.1002/smll.202570002

journal article·2025-01Open access

Origin of Enhanced Photoelectrochemical Activity of the n‐CdS/p‐type Semiconductor Interface: Homojunction or Heterojunction? (Small 1/2025)

Sang Youn Chae, Minki Jun, Noyoung Yoon, Oh Shim Joo, Jin Young Kim, Eun Duck Park

Small· Volume 21· Issue 1

Publisher page Open full text

Source abstract

Abstract

Photoelectrochemical Cells The efficiency of a p-type photocathode in a photoelectrochemical (PEC) cell can be enhanced by introducing a buried p–n junction due to unintentional Cd doping during CdS formation rather than the CdS/p-semiconductor heterojunction itself. For the first time, a homojunction in CuInS2 was demonstrated using Cd doping for PEC H2 production. More in article number 2405048, Jin Young Kim, Eun Duck Park, and co-workers.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Energy System Research Ajou University Suwon 16499 Republic of Korea

Ajou Energy Science Research Center Ajou University Suwon 16499 Republic of Korea

Hydrogen·Fuel Cell Research Center Korea Institute of Science and Technology Seoul 02792 Republic of Korea

Clean Energy Research Center Korea Institute of Science and Technology Seoul 02792 Republic of Korea

Department of Chemical and Biomolecular Engineering Yonsei University Seoul 03722 Republic of Korea

Department of Chemical Engineering Ajou University Suwon 16499 Republic of Korea

References

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