High‐Yield Production of High‐κ/Metal Gate Nanopattern Array for 2D Devices via Oxidation‐Assisted Etching Approach (Small 51/2024)
Source abstract
Abstract
Nanopattern Arrays High-performance high-?/metal gate (HKMG) structures are crucial for advanced electronics. In article number 2403187, Ziao Tian, Zengfeng Di, and co-workers introduce an innovative oxidation-assisted etching method for large-scale, high-yield HKMG arrays with 150 nm resolution. By controlling aluminum to alumina transition on 2D materials, a process compatible with existing semiconductor techniques is achieved, promising for VLSI circuit applications and nanoelectronics advancement.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Anodic Oxide Films and Nanostructures · Ferroelectric and Negative Capacitance Devices
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Affiliations
State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China
Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China
References
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