Hypoeutectic Liquid Metal Printing of 2D Indium Gallium Oxide Transistors (Small 45/2024)

Flexible Electronics In article number 2403801, William J. Scheideler and co-workers utilize liquid metal surface oxidation to synthesize crystalline two-dimensional (<3 nm thick) InGaOx (IGO) semiconductors from hypoeutectic In-Ga alloys at plastic substrate compatible temperatures (180 °C). These ultrathin channel transistors exhibit steep subthreshold slope and high mobility (∼18 cm2 Vs−1) suitable for flexible oxide electronics.