Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells (Small 44/2024)
Source abstract
Abstract
UV Optoelectronics In article number 2401139, Radoslaw Szymon and co-workers report on the performance enhancement of GaN nanowires achieved through partial coverage with AlOx and HfOx. The improvements include crystal lattice relaxation, luminescence enhancement, and photodegradation prevention. They explain that maintaining a balance among the various mechanisms introduced by these shells is key to achieving highly efficient systems for UV optoelectronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials
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Affiliations
Department of Experimental Physics Wroclaw University of Science and Technology Wybrzeze Wyspianskiego 27 Wroclaw 50–370 Poland
Institute of Physics Polish Academy of Sciences Al. Lotnikow 32/46 Warsaw 02–668 Poland
Department of Statistics Econometrics and Mathematics University of Economics in Katowice 1 Maja 50 Katowice 40–287 Poland
References
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