Achieving Ideal and Environmentally Stable n‐Type Charge Transport in Polymer Field‐Effect Transistors (Small 16/2024)
Source abstract
Abstract
Polymer Field-Effect Transistors In article number 2306010, Jian Pei and co-workers demonstrate ideal and environmentally stable charge transport in n-type polymer field-effect transistors. The fabricated transistors exhibit high electron mobility and near 100% reliability factors and remain robust after being stored in air for more than 300 days and immersed in water or acetone.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Analytical Chemistry and Sensors · Advancements in Semiconductor Devices and Circuit Design · Advanced Memory and Neural Computing
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Affiliations
Beijing National Laboratory for Molecular Sciences (BNLMS) Key Laboratory of Polymer Chemistry and Physics of Ministry of Education Center of Soft Matter Science and Engineering College of Chemistry and Molecular Engineering Peking University Beijing 100871 China
Ningbo Boya Poly Advanced Materials Co. Ltd. Ningbo 315042 China
References
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