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journal article·2024-01Open access

n‐Si/SiOx/CoOx‐Mo Photoanode for Efficient Photoelectrochemical Water Oxidation (Small 3/2024)

Shuyang Peng, Di Liu, Keyu An, Zhiqin Ying, Mingpeng Chen, Jinxian Feng, Kin Ho Lo, Hui Pan

Small· Volume 20· Issue 3
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Source abstract

Abstract

Photoelectrochemical Water Oxidation In article number 2304376, Kin Ho Lo, Hui Pan, and co-workers report a metal-insulator-semiconductor (MIS) structure photoanode (n-Si/SiOx/CoOx-Mo) to show a high photovoltage of 650 mV, saturation current density of 27.6 mA cm−2, and fill factor of 0.62 in 1.0 M K3BO3 because the energy barrier, charge transfer, reaction kinetics, and active sites are dramatically increased by the Mo-incorporation. And the Mo-incorporated photoanode is also highly stable.
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Research context

Electronic materials

OpenAlex topics: Advanced Photocatalysis Techniques

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Affiliations

Department of Electromechanical Engineering Faculty of Science and Technology University of Macau Macao S. A. R. 999078 China

Institute of Applied Physics and Materials Engineering University of Macau Macao S. A. R. 999078 China

Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences (CAS) Ningbo City 315201 P. R. China

Yunnan Key Laboratory for Micro/Nano Materials & Technology School of Materials and Energy Yunnan University Kunming 650091 China

Department of Physics and Chemistry Faculty of Science and Technology University of Macau Macao S. A. R. 999078 China

References

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