Ferroelectric Nanogap‐Based Steep‐Slope Ambipolar Transistor (Small 48/2022)
Source abstract
Abstract
Steep-Slope Devices In article number 2203017, Long You and co-workers demonstrate a steep-slope ambipolar transistor based on switchable ferroelectric nanogap with excellent performance, such as low subthreshold swing and high steep-slope current densities, which has potential as a type of emerging steep-slope device in the era of hyper Moore's law.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Ferroelectric and Negative Capacitance Devices
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Affiliations
School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan 430074 China
Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan 430074 China
References
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