journal article·2022-10

Continuous Single‐Crystalline GaN Film Grown on WS2‐Glass Wafer (Small 41/2022)

Yue Yin, Bingyao Liu, Qi Chen, Zhaolong Chen, Fang Ren, Shuo Zhang, Zhetong Liu, Rong Wang, Meng Liang, Jianchang Yan, Jingyu Sun, Xiaoyan Yi, Tongbo Wei, Junxi Wang, Jinmin Li, Zhongfan Liu, Peng Gao, Zhiqiang Liu

Small· Volume 18· Issue 41
Publisher page

Abstract

Semiconductors In article number 2202529, Tongbo Wei, Zhongfan Liu, Peng Gao, Zhiqiang Liu, and co-workers find that geometry matched WS2 can provide a proper lattice potential field for nitrides epitaxial growth. By using a transferred WS2 buffer layer, a single-crystalline GaN epilayer can be obtained on an amorphous quartz glass by heterogenous epitaxy.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials

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Affiliations

Research and Development Center for Semiconductor Lighting Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

Electron Microscopy Laboratory and International Center for Quantum Materials School of Physics Peking University Beijing 100871 China

Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China

Beijing Graphene Institute (BGI) Beijing 100095 China

Center for Nanochemistry (CNC) Beijing Science and Engineering Center for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 China

College of Energy Soochow Institute for Energy and Materials Innovations Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies Soochow University Suzhou 215006 China

References

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