Contents: (Small 41/2016)

On page 5720, J.-H. Ahn and co-workers demonstrate large area, fl exible hybrid complementary metal-oxide-semiconductor (CMOS) logic inverter based on the combination of ultrathin p-channel c-Si nanomembranes and n-channel chemical vapor deposition MoS 2 transistors. Such integration of high performance Si technology with transition-metal dichalcogenides offers reliable electrical and mechanical properties and promises a realistic path for the fabrication of fl exible/transparent CMOS circuits in 2D electronics.