Resistive Switching Memory: Lead‐Free Dual‐Phase Halide Perovskites for Preconditioned Conducting‐Bridge Memory (Small 41/2020)
Source abstract
Abstract
In article number 2003225, Soo Young Kim, Ho Won Jang, and co-workers successfully fabricate preconditioned resistive switching memory devices using lead-free dual-phase halide perovskites. The devices show filamentary resistive switching behavior involving Ag cations in halide perovskites with ultra-low operating voltages, and high on/off ratio.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Transition Metal Oxide Nanomaterials
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Affiliations
Department of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul 08826 Republic of Korea
Institute of Research and Development Duy Tan University Da Nang 550000 Vietnam
Joint Center for Artificial Photosynthesis Chemical Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea
References
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