DataVXSmallPaper
journal article·2019-09Open access

Field‐Effect Transistors: A Facile and Effective Method for Patching Sulfur Vacancies of WS2 via Nitrogen Plasma Treatment (Small 36/2019)

Jianfeng Jiang, Qinghua Zhang, Aizhu Wang, Yu Zhang, Fanqi Meng, Congcong Zhang, Xianjin Feng, Yuanping Feng, Lin Gu, Hong Liu, Lin Han

Small· Volume 15· Issue 36
Publisher pageOpen full text
Source abstract

Abstract

In article number 1901791, Lin Han, Hong Liu, Lin Gu, and co-workers present a facile and effective defects-patching approach via nitrogen plasma doping for inevitable vacancies in transition metal dichalcogenides, which opens up new opportunities for the use of high-performance 2D devices in practical electronic applications. In the cover, the five-color stone in the hands of Nuwa refers to the nitrogen atom.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Marine Science and Technology Shandong University Qingdao 266200 China

School of Microelectronics Shandong University Jinan 250100 China

Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

Institute for Advanced Interdisciplinary Research (iAIR) University of Jinan Jinan 250022 China

Department of Physics and Centre for Advanced Two‐dimensional Materials National University of Singapore Singapore 117542 Singapore

State Key Laboratory of Crystal Materials Shandong University Jinan Shandong 250100 China

References

Reference metadata was not supplied for this record.