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journal article·2019-02Open access

Field‐Effect Transistors: Threshold Voltage Control of Multilayered MoS2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates (Small 7/2019)

Jeongkyun Roh, Jae Hyeon Ryu, Geun Woo Baek, Heeyoung Jung, Seung Gi Seo, Kunsik An, Byeong Guk Jeong, Doh C. Lee, Byung Hee Hong, Wan Ki Bae, Jong‐Ho Lee, Changhee Lee, Sung Hun Jin

Small· Volume 15· Issue 7
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Source abstract

Abstract

In article number 1803852, Changhee Lee, Sung Hun Jin, and co-workers develop an adjustment scheme for threshold voltage of multi-layered MoS2 field effect transistors via octadecyltrichlorosilane treatment on the back channel of multi-layered MoS2. More impressively, enhancement-mode MoS2 logic gates and active matrixed quantum dot pixels are successfully demonstrated, which can be potentially utilized for next-generation device opportunities.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Conducting polymers and applications

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Affiliations

Department of Electrical and Computer Engineering Inter‐University Semiconductor Research Center Seoul National University 1 Gwanak‐ro, Gwanak‐gu Seoul 08826 Republic of Korea

Department of Electronic Engineering Incheon National University Academy‐ro, Yeongsu‐gu Incheon 22012 Republic of Korea

Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

Department of Chemistry Seoul National University 1 Gwanak‐ro, Gwanak‐gu Seoul 08826 Republic of Korea

SKKU Advanced Institute of Nano Technology (SAINT) Sungkyunkwan University Seobu‐ro, Jangan‐gu Suwon‐si 16419 Gyeonggi‐do Republic of Korea

References

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