Quantum Dots: Growth of InAs Quantum Dots on GaAs (511)A Substrates: The Competition between Thermal Dynamics and Kinetics (Small 31/2016)
Source abstract
Abstract
On page 4277, G. Li and co-workers aim to promote III-V compound semiconductors and devices for a broad range of applications with various technologies. The growth process of InAs quantum dots on GaAs (511)A substrates is systematically studied. By carefully controlling the competition between growth thermal-dynamics and kinetics, InAs quantum dots with high size uniformity are prepared, which are highly desirable for the fabrication of high-efficiency solar cells.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices
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Affiliations
State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510641 P. R. China
Engineering Research Center on Solid‐State Lighting and its Informationisation of Guangdong Province South China University of Technology Guangzhou 510641 P. R. China
Department of Electronic Materials School of Materials Science and Engineering South China University of Technology Guangzhou 510640 P. R. China
References
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