Field Effect Transistors: Direct‐Write Complementary Graphene Field Effect Transistors and Junctions via Near‐Field Electrospinning (Small 10/2014)

A novel process to create a self-aligned and chemically doped graphene channel is presented by L. Lin and co-workers on page 1920. Near-field electrospinning, reengineered from conventional electrospinning, is utilized to pattern and chemically dope the graphene layer using functionalized polymers such as PEI and PEO. Arbitrary patterning is readily available to write channels on either flexible or dielectric substrates. Field effects of p- and n-type graphene channel transistors are fabricated and a complimentary inverter circuitry using electronic junctions is successfully demonstrated. This work may be the impetus for substantial and practical development in graphene-based electronics.