DataVXSmallPaper
journal article·2012-10-22

Data Storage: MoS2 Nanosheets for Top‐Gate Nonvolatile Memory Transistor Channel (Small 20/2012)

Hee Sung Lee, Sung‐Wook Min, Min Kyu Park, Young Tack Lee, Pyo Jin Jeon, Jae Hoon Kim, Sunmin Ryu, Seongil Im

Small· Volume 8· Issue 20
Publisher page
Source abstract

Abstract

On page 3111, S. Im and co-workers demonstrate top-gate ferroelectric memory transistors with single- to triple-layered MoS2 nanosheets adopting P(VDF-TrFE). This nonvolatile memory transistor with a single-layer MoS2 channel exhibits excellent retention properties for more than 1000 s, maintaining ∼5 × 103 as a programme/erase ratio. It also displays a high mobility of ∼220 cm2/V·s.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: Ferroelectric and Negative Capacitance Devices

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References

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