Memory: Graphene-Graphene Oxide Floating Gate Transistor Memory (Small 3/2015)

A novel, transparent, flexible graphene channel floating-gate transistor memory (FGTM) device is developed by J. H. Cho and co-workers, who combine a single-layer graphene active channel with graphene oxide (GO) charge trap elements. On page 311, the application of positively charged GO (GO–NH3+) and precise control over n-doping in the graphene channel dramatically enhance the electrical performance and mechanical stability of the memory device.