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journal article·2024-02Open access

Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode (Small 7/2024)

Lulu Wang, Shenyuan Yang, Fan Zhou, Yaqi Gao, Yiwei Duo, Renfeng Chen, Jiankun Yang, Jianchang Yan, Junxi Wang, Jinmin Li, Yanfeng Zhang, Tongbo Wei

Small· Volume 20· Issue 7
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Source abstract

Abstract

Light-Emitting Diodes In article number 2306132, Tongbo Wei and co-workers demonstrate a pioneering technology for growing 3D semiconductor films on 2D materials, namely van der Waals epitaxy, which both relaxes the lattice and thermal matching requirements between the epilayer and substrate, and enables the exfoliation of epilayers for flexible optoelectronic devices, such as flexible displays.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: GaN-based semiconductor devices and materials

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Affiliations

Research and Development Center for Semiconductor Lighting Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Center for Nanochemistry (CNC) Beijing Science and Engineering Center for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 China

References

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