Superior Performances of Self‐Driven Near‐Infrared Photodetectors Based on the SnTe:Si/Si Heterostructure Boosted by Bulk Photovoltaic Effect (Small 14/2023)
Source abstract
Abstract
Self-Driven Near-Infrared Photodetectors In article number 2206262, Hao Jin, Longbiao Huang, Zhenhua Sun, and co-workers report that bulk photovoltaic effect (BPVE) is found in the SnTe film by Si doping though breaking the inversion symmetry. As a result, additional current originated from the BPVE is generated beyond the p-n junctions, leading to an improvement of photocurrent by 7.5 times.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films
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Affiliations
Shenzhen Key Laboratory of Advanced Thin Films and Applications College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P.R. China
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P.R. China
References
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