Broadband Photodetection: 2D Silicon‐Based Semiconductor Si2Te3 toward Broadband Photodetection (Small 13/2021)
Source abstract
Abstract
In article number 2006496, Liang Li, Guanghai Li, and co-workers synthesize silicon-based semiconductor Si2Te3 crystals using a chemical vapor deposition technique. The combined features of silicon and layered structure bridge the 2D materials family and silicon-based materials family together, while the intrinsic defects in Si2Te3 yield ultrawide photoluminescence spectra and broadband spectral response from 405 nm up to 1064 nm.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · 2D Materials and Applications · Chalcogenide Semiconductor Thin Films
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Affiliations
Key Laboratory of Materials Physics Anhui Key Laboratory of Nanomaterials and Nanotechnology Institute of Solid State Physics Chinese Academy of Sciences University of Science and Technology of China Hefei 230031 P. R. China
Institutes of Physical Science and Information Technology Anhui University Hefei 230601 P. R. China
Photoelectric Conversion Energy Materials and Devices Key Laboratory of Anhui Province Anhui University Hefei 230601 P. R. China
References
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