MoTe₂ CMOS Inverters: Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits (Small 28/2019)

In article number 1901772, Jong-Hyun Ahn and co-workers demonstrate the use of ultrathin Al2O3 layer as a selective-surface dopant for the fabrication of complementary metal-oxide-semiconductor (CMOS) inverter on single MoTe2 crystal. This surface doping approach can offer a realistic path for the realization of 2D transition-metal-dichalcogenide based efficient and ultrafast electronic-units with high-density circuit components under a low-dimensional regime.