journal article·2018-05Open access

Metal‐Semiconductor Contacts: Metallic Contact between MoS2 and Ni via Au Nanoglue (Small 22/2018)

Xinying Shi, Sergei Posysaev, Marko Huttula, Vladimir Pankratov, Joanna Hoszowska, Jean‐Claude Dousse, Faisal Zeeshan, Yuran Niu, Alexei Zakharov, Taohai Li, Olga Miroshnichenko, Meng Zhang, Xiao Wang, Zhongjia Huang, Sami Saukko, Diego López González, Sebastiaan van Dijken, Matti Alatalo, Wei Cao

Small· Volume 14· Issue 22

Abstract

In article number 1704526, Wei Cao and co-workers realize a metallic contact between the Ni and layered MoS2 semiconductor by introducing gold nanobuffers, leading to a substantial decrease of electric resistivity at the M/S interface. Simultaneous microscopic and spectroscopic determinations prove the formation of Ni–Au–MoS2 ternary alloy subjected to a facile wet method synthesis. The metallic M/S contact and band alignment provide a potential for layered semiconductors in future electronics.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces

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Affiliations

Nano and Molecular Systems Research Unit University of Oulu P.O. Box 3000 FI‐90014 Oulu Finland

Department of Physics University of Fribourg Ch. du Musée 3 CH‐1700 Fribourg Switzerland

MAX IV Laboratory Lund University P.O. Box 118 22100 Lund Sweden

College of Chemistry Key Lab of Environment Friendly Chemistry and Application in Ministry of Education Xiangtan University Xiangtan 411105 China

Department of Physics East China University of Science and Technology Shanghai 200237 China

School of Mechanical and Automotive Engineering Anhui Polytechnic University Wuhu 241000 China

Center of Microscopy and Nanotechnology University of Oulu P.O. Box 7150 FI‐90014 Oulu Finland

NanoSpin Department of Applied Physics Aalto University School of Science P.O. Box 15100 FI‐00076 Aalto Finland

References

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