Photodetectors: Localized Surface Plasmon Induced Position‐Sensitive Photodetection in Silicon‐Nanowire‐Modified Ag/Si (Small 41/2017)

In article number 1701726, by Hui Wang and co-workers, a silicon-nanowire modified metal-semiconductor nanostructure is fabricated to induce a large lateral photovoltaic effect (LPE). The increased sensitivity of LPE is beneficial to high-performance position-sensitive photodetectors. The strong localized surface plasmons (LSPs) supported by silver nanoparticles contributed to the enhancement of light trapping and photo-induced carrier generation. These novel LSPs propelled methods expand excellent application prospects of photoelectric devices.