Light‐Emitting Devices: Wavelength‐Tunable Electroluminescent Light Sources from Individual Ga‐Doped ZnO Microwires (Small 19/2017)
Source abstract
Abstract
Color-tunable light-emitting devices are achieved from biased individual Ga-doped ZnO microwires in article number 1604034, by Chongxin Shan, Dezhen Shen, and Xiaosheng Fang, and co-workers. It is confirmed that tunable n-type conduction in Ga-doped ZnO microwires is dominated by Ga impurities. These multicolor emitters can be used to rival and complement other conventional semiconductor devices in electronic and photoelectronic devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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Affiliations
State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences No. 3888 Dongnanhu Road Changchun 130033 P. R. China
Graduate University of the Chinese Academy of Sciences Beijing 100049 P. R. China
Department of Materials Science Fudan University Shanghai 200433 P. R. China
References
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