journal article·2017-04Open access

Flexible Electronics: Highly Manufacturable Deep (Sub‐Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego‐Like Silicon Electronics (Small 16/2017)

Mohamed Tarek Ghoneim, Muhammad Mustafa Hussain

Small· Volume 13· Issue 16

Abstract

In article number 1601801, by Mohamed Tarek Ghoneim and Muhammad Mustafa Hussain, to ease the complexity of state-of-the-art complementary metal oxide semiconductor (CMOS) technology, a hybrid integration approach is demonstrated which uses a combination of sacrificial polymeric soft and thin film metal hard masks to perform deep reactive ion etching based high aspect ratio complex structure formation in silicon electronics.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: TiO2 Photocatalysis and Solar Cells · Additive Manufacturing and 3D Printing Technologies · Advanced Materials and Mechanics

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Affiliations

Integrated Nanotechnology Lab and Integrated Disruptive Electronic Applications (IDEA) Lab King Abdullah University of Science and Technology Thuwal 23955‐6900 Saudi Arabia

References

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