Nanowires: Enhanced Optoelectronic Performance of a Passivated Nanowire‐Based Device: Key Information from Real‐Space Imaging Using 4D Electron Microscopy (Small 17/2016)
Source abstract
Abstract
Selective mapping of surface charge carrier dynamics of InGaN nanowires before and after surface passivation with octadecylthiol (ODT) is reported by O. F. Mohammed and co-workers on page 2313, using scanning ultrafast electron microscopy. In a typical experiment, the 343 nm output of the laser beam is used to excite the microscope tip to generate pulsed electrons for probing, and the 515 nm output is used as a clocking excitation pulse to initiate dynamics. Time-resolved images demonstrate clearly that carrier recombination is significantly slowed after ODT treatment, which supports the efficient removal of surface trap states.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Nanowire Synthesis and Applications
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Affiliations
Solar and Photovoltaics Engineering Research Center Division of Physical Sciences and Engineering King Abdullah University of Science and Technology Thuwal 23955‐6900 Kingdom of Saudi Arabia
Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering KAUST Thuwal 23955‐6900 Kingdom of Saudi Arabia
References
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