Flexible Electronics: Hybrid Flexible Resistive Random Access Memory‐Gated Transistor for Novel Nonvolatile Data Storage (Small 3/2016)
Source abstract
Abstract
V. A. L. Roy and co-workers present a novel hybrid architecture to achieve programmable transistor nodes that are analogous to flash memory. On page 390, they incorporate a resistive switching random access memory as a switch gate for a transistor on a flexible substrate. The controlled, well-defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities for realizing fully functional nonvolatile memory for high-performance flexible electronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics and Materials Science City University of Hong Kong Hong Kong SAR China
Institute for Advanced Study Shenzhen University Shenzhen Guangdong 508060 P. R. China
State Key Laboratory of Millimeter Waves City University of Hong Kong Hong Kong SAR China
School of Materials Science and Engineering Nanyang Technological University 639798 Singapore
School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 P. R. China
References
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