DataVXSmallPaper
journal article·2017-10Open access

Semiconductors: Temperature‐Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures (Small 40/2017)

Mengxi Liu, Jianping Shi, Yuanchang Li, Xiebo Zhou, Donglin Ma, Yue Qi, Yanfeng Zhang, Zhongfan Liu

Small· Volume 13· Issue 40
Publisher pageOpen full text
Source abstract

Abstract

In article number 1602967, Yanfeng Zhang, and Zhongfan Liu, and co-workers demonstrate that sulfur vacancies generated in MoS2/graphene heterostructures via a temperature-triggered process, lead to a decrease of the bandgap and n-doping effect of single layer MoS2.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Nanochemistry (CNC) Beijing Science and Engineering Center for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China

CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190 P. R. China

Department of Materials Science and Engineering College of Engineering Peking University Beijing 100871 P. R. China

References

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