journal article·2024-11Open access

Attojoule Hexagonal Boron Nitride‐Based Memristor for High‐Performance Neuromorphic Computing (Small 45/2024)

Jiye Kim, Jaesub Song, Hyunjoung Kwak, Chang‐Won Choi, Kyungmi Noh, Seokho Moon, Hyeonwoong Hwang, Inyong Hwang, Hokyeong Jeong, Si‐Young Choi, Seyoung Kim, Jong Kyu Kim

Small· Volume 20· Issue 45

Abstract

Neuromorphic Computing In article number 2403737, Jong Kyu Kim and co-workers present a two-dimensional hexagonal boron nitride based memristor with a metal-insulator-semiconductor configuration, specifically designed for energy-efficient neuromorphic applications operating at attojoule levels. This breakthrough has the potential to revolutionize energy usage in neuromorphic systems, bridging the gap in energy efficiency between artificial and biological synapses.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · MXene and MAX Phase Materials · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam‐ro, Nam‐gu Pohang 37673 Republic of Korea

Center for Van der Waals Quantum Solids Institute for Basic Science (IBS) Pohang 37673 Republic of Korea

Department of Semiconductor Engineering POSTECH Pohang 37673 Republic of Korea

References

Reference metadata was not supplied for this record.