A Kinetic Model for the Generation and Annihilation of Thermally Induced Carrier Donors in a Semiconducting Metal‐Oxide Thin Film (Small 41/2022)
Source abstract
Abstract
Metal-Oxide Semiconductors In article number 2203346, Zhihe Xia, Man Wong, and co-workers propose a 3-parameter equation based on a kinetic model involving oxidant diffusion and an oxidation-reduction reaction of intrinsic donor defects. It is shown to be applicable to common metal-oxide semiconductors and is deployed to the characterization of donor defects.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Catalytic Processes in Materials Science
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Affiliations
Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Kowloon Hong Kong 999077 China
References
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