Flexible Transistor‐Structured Memory: Recent Process of Flexible Transistor‐Structured Memory (Small 9/2021)
Source abstract
Abstract
In article number 1905332, Yao Ni, Yongfei Wang, and Wentao Xu review the recent progress of flexible transistor-structured memory (FTSM). Various FTSMs with different mechanisms and functions are elucidated, including three types of classic FTSMs based on floating-gate, charge-trap and ferroelectric mechanisms, as well as two kinds of special FTSMs, with optical response and synaptic plasticity, respectively. This review could help readers better understand the developing trend of this research field.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Optoelectronic Thin Film Devices and Technology Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin Nankai University Tianjin 300350 China
School of Materials and Metallurgy University of Science and Technology Liaoning Anshan 114051 China
References
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