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journal article·2025-06Open access

Toward Understanding Temperature and Bias Instabilities of Anti‐ambipolar Transistors via Low‐Frequency Noise Spectroscopy (Small 25/2025)

Jaechan Song, Youngmin Han, Ryun‐Han Koo, Junghye Seo, Hocheon Yoo, Wonjun Shin

Small· Volume 21· Issue 25
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Source abstract

Abstract

Anti-Ambipolar Transistors In article number 2409700, Hocheon Yoo, Wonjun Shin, and co-workers report on anti-ambipolar transistors that exhibit unique nonlinear current responses, making them promising candidates for advanced logic. However, their practical implementation has been hindered by temperature and bias instabilities, which remain poorly understood. This study uncovers the origin of these instabilities through low-frequency noise analysis and demonstrates that inserting an insulative layer can effectively mitigate them.
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Research context

Electronic materials

OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Radio Frequency Integrated Circuit Design · Semiconductor Quantum Structures and Devices

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Affiliations

Department of Semiconductor Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 South Korea

Department of Electrical and Computer Engineering Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 South Korea

Yonsei Center for Research Facilities Yeonsei University 50 Yonsei‐ro Seoul 03722 South Korea

Department of Electronic Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 South Korea

Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon 16419 South Korea

References

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