Examining Different Regimes of Ionization‐Induced Damage in GaN Through Atomistic Simulations (Small 49/2022)
Source abstract
Abstract
Radiation-Hard Semiconductors GaN is a promising radiation-hard semiconductor. In article number 2102235, Miguel C. Sequeira and co-workers clarify its ion-solid dynamics in the strongly ionizing regime. Atomistic simulations and microscopy techniques revealed several sub-nanosecond interaction stages, including a hot sputtering phase and a relaxed ion track with distinct morphologies near and far from the surface.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Electron and X-Ray Spectroscopy Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
IBC Helmholtz‐Zentrum Dresden‐Rossendorf Dresden Germany
IPFN Instituto Superior Técnico Campus Tecnológico e Nuclear Lisbon Portugal
Department of Physics University of Helsinki Helsinki Finland
CIMAP Normandie University CEA, CNRS, UNICAEN, ENSICAEN‐BP5133 Caen Cedex 5 France
INESC MN Rua Alves Redol 9 Lisbon 1000‐029 Portugal
References
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