Vertically Formed Graphene Stripe for 3D Field‐Effect Transistor Applications

A 100‐nm wide, vertically formed graphene stripe (GS) is demonstrated for three‐dimensional (3D) electronic applications. The GS forms along the sidewall of a thin nickel film. It is possible to further scale down the GS width by engineering the deposited thickness of the atomic layer deposition (ALD) Ni film. Unlike a conventional GS or graphene nanoribbon (GNR), the vertically formed GS is made without a graphene transfer and etching process. The process integration of the proposed GS FETs resembles that of currently commercialized vertical NAND flash memory with a design rule of less than 20 nm, implying practical usage of this formed GS for 3D advanced FET applications.