Complementary Logic Inverters: High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT (Small 12/2015)
Source abstract
Abstract
A hybrid complementary logic inverter consisting of an n-type oxide thin-film transistor (TFT) and a microelectromechanical system switch is proposed as a promising alternative to p-type oxide TFTs by S.-H. K. Park, J.-B. Yoon, and co-workers for ultralow power integrated circuits. Monolithically integrated heterogeneous microdevices are shown on a flexible substrate with a MEMS switch vertically stacked on top of the n-type oxide TFT. On page 1390, the logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Neural Networks and Reservoir Computing · Advancements in Semiconductor Devices and Circuit Design · Optical Network Technologies
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Affiliations
Department of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro Yuseong‐gu Daejeon 305–701 Republic of Korea
Oxide TFT Research Team Electronics and Telecommunications Research Institute 138 Gajeongno Yuseong‐gu Daejeon 305–700 Republic of Korea
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro Yuseong‐gu Daejeon 305–701 Republic of Korea
References
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