Self‐Aligned Sub‐10‐nm Nanogap Electrode Array for Large‐Scale Integration

Abstract A novel approach to creating a gap on the nanometer scale between two adjacent electrodes of the same or different metals is described. The gap size can be well controlled through sidewall coverage in a self‐aligned manner and it can be tuned from 60 nm down to 5 nm with high reproducibility. This technique is fully compatible with traditional microfabrication technology and it is easily implemented to fabricate a nanogap electrode array for integration purposes. An array of short‐channel single‐walled carbon nanotube field‐effect transistors is demonstrated.