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journal article·2024-05Open access

Photo‐Assisted Ferroelectric Domain Control for α‐In2Se3 Artificial Synapses Inspired by Spontaneous Internal Electric Fields (Small 22/2024)

Seok‐Ju Kang, Wonzee Jung, Oh Hun Gwon, Han Seul Kim, Hye Ryung Byun, Jong Yun Kim, Seo Gyun Jang, BeomKyu Shin, Ojun Kwon, Byungjin Cho, Kanghoon Yim, Young‐Jun Yu

Small· Volume 20· Issue 22
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Source abstract

Abstract

Photo-Stimulated Ferroelectric Memories In article number 2307346, Kanghoon Yim, Young-Jun Yu, and co-workers demonstrate white-light illuminated α-In2Se3 ferroelectric field effect transistors for efficient synaptic memory operation. By spontaneous Fermi level regulation of α-In2Se3 with photogenerated electron-hole pairs, the strengthened built-in electric field within an α-In2Se3 channel allows the superior recognition accuracy of artificial neural networks. This advancement could be invaluable in the forthcoming era of artificial neuromorphic computing.
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Research context

Electronic materials

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography · Quantum Dots Synthesis And Properties

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Affiliations

Department of Physics Chungnam National University 99 Daehak‐ro, Yuseong‐gu Daejeon 34134 Republic of Korea

Institute of Quantum Systems Chungnam National University 99 Daehak‐ro, Yuseong‐gu Daejeon 34134 Republic of Korea

Energy AI & Computational Science Laboratory Korea Institute of Energy Research Daejeon 34129 Republic of Korea

Department of Advanced Material Engineering Chungbuk National University Chungdae‐ro 1, Seowon‐Gu Cheongju Chungbuk 28644 Republic of Korea

References

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