Complementary Photo‐Synapses: Complementary Photo‐Synapses Based on Light‐Stimulated Porphyrin‐Coated Silicon Nanowires Field‐Effect Transistors (LPSNFET) (Small 30/2021)
Source abstract
Abstract
In article number 2101434, Ming Li and co-workers propose a CMOS-compatible Light-stimulated Porphyrin-coated Silicon Nanowire Field Effect Transistor (LPSNFET) to form the complementary photo-synapses with only two CMOS-like transistors. LPSNFET exhibits five-fold improvement in photo sensitivity compared to the bare silicon nanowire devices. Complementarily behaviors can be realized by modulating SiNW/porphyrin interface, and the CMOS compatibility provides a potential application in future large scale in-sensor computing.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors
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Affiliations
Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China
National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of Microelectronics Peking University Beijing 100871 China
Frontiers Science Center for Nano‐optoelectronics Peking University Beijing 100871 China
References
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